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WNSC5D086506Q

  • image of Single Diodes>WNSC5D086506Q
  • image of Single Diodes>WNSC5D086506Q
  • image of Single Diodes>WNSC5D086506Q
  • image of Single Diodes>WNSC5D086506Q
Dash number
Product classification
Manufacturer
Type
Package
Quantity
RoHS status
WNSC5D086506Q
Single Diodes
WeEn Semiconductors Co., Ltd
DIODE SIL CARB
Tube
0
image of Single Diodes>WNSC5D086506Q
image of Single Diodes>WNSC5D086506Q
image of Single Diodes>WNSC5D086506Q
WNSC5D086506Q
Dash number
Product classification
Manufacturer
Type
Encapsulation
Package
Quantity
RoHS status
WNSC5D086506Q
Single Diodes
WeEn Semiconductors Co., Ltd
DIODE SIL CARB
Tube
0
Product parameter
TYPEDESCRIPTION
MfrWeEn Semiconductors Co., Ltd
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F267pF @ 1V, 1MHz
Current - Average Rectified (Io)8A
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
Current - Reverse Leakage @ Vr40 µA @ 650 V
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