TPH3208LDG

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TPH3208LDG
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
Tube
9
: $11.0191
: 9

1

$11.0191

$11.0191

image of Single FETs, MOSFETs>TPH3208LDG
image of Single FETs, MOSFETs>TPH3208LDG
TPH3208LDG
TPH3208LDG
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
Tube
9
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusOBSOLETE
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 13A, 8V
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id2.6V @ 300µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
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