TP65H050WS

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  • image of Single FETs, MOSFETs>TP65H050WS
TP65H050WS
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
Tube
317
: $17.8467
: 317

1

$17.8467

$17.8467

30

$14.4430

$433.2900

120

$13.5946

$1,631.3520

510

$12.3220

$6,284.2200

image of Single FETs, MOSFETs>TP65H050WS
image of Single FETs, MOSFETs>TP65H050WS
TP65H050WS
TP65H050WS
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
Tube
317
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
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