TP65H050G4YS

  • image of Single FETs, MOSFETs>TP65H050G4YS
  • image of Single FETs, MOSFETs>TP65H050G4YS
TP65H050G4YS
Single FETs, MOSFETs
Transphorm
650 V 35 A GAN
Tube
402
: $10.0091
: 402

1

$14.5036

$14.5036

10

$12.7765

$127.7650

450

$10.0091

$4,504.0950

image of Single FETs, MOSFETs>TP65H050G4YS
image of Single FETs, MOSFETs>TP65H050G4YS
TP65H050G4YS
TP65H050G4YS
Single FETs, MOSFETs
Transphorm
650 V 35 A GAN
Tube
402
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
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