TP65H050G4BS

  • image of Single FETs, MOSFETs>TP65H050G4BS
  • image of Single FETs, MOSFETs>TP65H050G4BS
TP65H050G4BS
Single FETs, MOSFETs
Transphorm
650 V 34 A GAN
Tube
193
: $10.2515
: 193

1

$12.6654

$12.6654

50

$10.2515

$512.5750

100

$9.6455

$964.5500

500

$8.7466

$4,373.3000

1000

$8.0194

$8,019.4000

image of Single FETs, MOSFETs>TP65H050G4BS
image of Single FETs, MOSFETs>TP65H050G4BS
TP65H050G4BS
TP65H050G4BS
Single FETs, MOSFETs
Transphorm
650 V 34 A GAN
Tube
193
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
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