SIHK105N60E-T1-GE3

  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER
Tape & Reel (TR)
2050
: $2.6866
: 2050

1

$5.5247

$5.5247

10

$4.6359

$46.3590

100

$3.7572

$375.7200

500

$3.3330

$1,666.5000

1000

$2.8583

$2,858.3000

2000

$2.6866

$5,373.2000

image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER
Tape & Reel (TR)
2050
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesEF
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerBSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 10A, 10V
Power Dissipation (Max)142W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2301 pF @ 100 V
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