SIHB055N60EF-GE3

  • image of Single FETs, MOSFETs>SIHB055N60EF-GE3
  • image of Single FETs, MOSFETs>SIHB055N60EF-GE3
SIHB055N60EF-GE3
Single FETs, MOSFETs
Vishay / Siliconix
EF SERIES POWER
Tube
881
: $4.9995
: 881

1

$6.2620

$6.2620

50

$4.9995

$249.9750

100

$4.4743

$447.4300

500

$3.9491

$1,974.5500

1000

$3.5552

$3,555.2000

2000

$3.3330

$6,666.0000

image of Single FETs, MOSFETs>SIHB055N60EF-GE3
image of Single FETs, MOSFETs>SIHB055N60EF-GE3
SIHB055N60EF-GE3
SIHB055N60EF-GE3
Single FETs, MOSFETs
Vishay / Siliconix
EF SERIES POWER
Tube
881
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesEF
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 26.5A, 10V
Power Dissipation (Max)278W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3707 pF @ 100 V
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