NESG2030M04-A

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  • image of Bipolar RF Transistors>NESG2030M04-A
  • image of Bipolar RF Transistors>NESG2030M04-A
  • image of Bipolar RF Transistors>NESG2030M04-A
NESG2030M04-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 2.
Bulk
0
image of Bipolar RF Transistors>NESG2030M04-A
image of Bipolar RF Transistors>NESG2030M04-A
image of Bipolar RF Transistors>NESG2030M04-A
NESG2030M04-A
NESG2030M04-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 2.
Bulk
0
Product parameter
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TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseSOT-343F
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain16dB
Power - Max80mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)2.3V
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 5mA, 2V
Frequency - Transition60GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.1dB @ 2GHz
Supplier Device PackageM04
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