NE851M03-A

  • image of Bipolar RF Transistors>NE851M03-A
  • image of Bipolar RF Transistors>NE851M03-A
NE851M03-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 5.
Bulk
0
image of Bipolar RF Transistors>NE851M03-A
image of Bipolar RF Transistors>NE851M03-A
NE851M03-A
NE851M03-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 5.
Bulk
0
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageBulk
Product StatusOBSOLETE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 1V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.9dB ~ 2.5dB @ 2GHz
Supplier Device PackageSOT-363
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