NE681M13-A

  • image of Bipolar RF Transistors>NE681M13-A
  • image of Bipolar RF Transistors>NE681M13-A
NE681M13-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 10
Bulk
0
image of Bipolar RF Transistors>NE681M13-A
NE681M13-A
NE681M13-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 10
Bulk
0
Product parameter
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TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseSOT-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Power - Max140mW
Current - Collector (Ic) (Max)65mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 3V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.7dB @ 1GHz
Supplier Device PackageM13
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