GP2T080A120H

  • image of Single FETs, MOSFETs>GP2T080A120H
  • image of Single FETs, MOSFETs>GP2T080A120H
GP2T080A120H
Single FETs, MOSFETs
SemiQ
SIC MOSFET 1200
Tube
13
: $9.0294
: 13

1

$11.3120

$11.3120

30

$9.0294

$270.8820

120

$8.0800

$969.6000

510

$7.1306

$3,636.6060

1020

$6.4135

$6,541.7700

image of Single FETs, MOSFETs>GP2T080A120H
GP2T080A120H
GP2T080A120H
Single FETs, MOSFETs
SemiQ
SIC MOSFET 1200
Tube
13
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrSemiQ
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1377 pF @ 1000 V
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