GCMX040B120S1-E1

  • image of Single FETs, MOSFETs>GCMX040B120S1-E1
  • image of Single FETs, MOSFETs>GCMX040B120S1-E1
GCMX040B120S1-E1
Single FETs, MOSFETs
SemiQ
SIC 1200V 40M M
Tube
107
: $25.3308
: 107

1

$28.5123

$28.5123

10

$25.3308

$253.3080

100

$22.1594

$2,215.9400

500

$18.9072

$9,453.6000

image of Single FETs, MOSFETs>GCMX040B120S1-E1
image of Single FETs, MOSFETs>GCMX040B120S1-E1
GCMX040B120S1-E1
GCMX040B120S1-E1
Single FETs, MOSFETs
SemiQ
SIC 1200V 40M M
Tube
107
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrSemiQ
Series-
PackageTube
Product StatusACTIVE
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Power Dissipation (Max)242W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3185 pF @ 1000 V
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