GC041N65QF

  • image of Single FETs, MOSFETs>GC041N65QF
  • image of Single FETs, MOSFETs>GC041N65QF
GC041N65QF
Single FETs, MOSFETs
Goford Semiconductor
MOSFET N-CH 650
Tube
30
: $10.9484
: 30

1

$10.9484

$10.9484

10

$9.6455

$96.4550

100

$8.3426

$834.2600

500

$7.5649

$3,782.4500

1000

$6.9387

$6,938.7000

image of Single FETs, MOSFETs>GC041N65QF
image of Single FETs, MOSFETs>GC041N65QF
GC041N65QF
GC041N65QF
Single FETs, MOSFETs
Goford Semiconductor
MOSFET N-CH 650
Tube
30
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrGoford Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs41mOhm @ 38A, 10V
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7650 pF @ 380 V
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