CGD65B200S2-T13

  • image of Single FETs, MOSFETs>CGD65B200S2-T13
  • image of Single FETs, MOSFETs>CGD65B200S2-T13
CGD65B200S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
Tape & Reel (TR)
4355
: $4.5955
: 4355

1

$4.5955

$4.5955

10

$3.8582

$38.5820

100

$3.1209

$312.0900

500

$2.7775

$1,388.7500

1000

$2.3735

$2,373.5000

2000

$2.2321

$4,464.2000

5000

$2.1513

$10,756.5000

image of Single FETs, MOSFETs>CGD65B200S2-T13
image of Single FETs, MOSFETs>CGD65B200S2-T13
CGD65B200S2-T13
CGD65B200S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
Tape & Reel (TR)
4355
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V
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