CGD65B130S2-T13

  • image of Single FETs, MOSFETs>CGD65B130S2-T13
  • image of Single FETs, MOSFETs>CGD65B130S2-T13
CGD65B130S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
Tape & Reel (TR)
4885
: $6.4842
: 4885

1

$6.4842

$6.4842

10

$5.4439

$54.4390

100

$4.4036

$440.3600

500

$3.9188

$1,959.4000

1000

$3.3532

$3,353.2000

2000

$3.1613

$6,322.6000

5000

$3.0300

$15,150.0000

image of Single FETs, MOSFETs>CGD65B130S2-T13
image of Single FETs, MOSFETs>CGD65B130S2-T13
CGD65B130S2-T13
CGD65B130S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
Tape & Reel (TR)
4885
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
captcha

0755-23814471

0