AS2M040120P

  • image of Single FETs, MOSFETs>AS2M040120P
  • image of Single FETs, MOSFETs>AS2M040120P
AS2M040120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Bulk
50
: $20.8969
: 50

1

$20.8969

$20.8969

10

$18.5739

$185.7390

100

$16.2408

$1,624.0800

500

$13.8572

$6,928.6000

image of Single FETs, MOSFETs>AS2M040120P
image of Single FETs, MOSFETs>AS2M040120P
AS2M040120P
AS2M040120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Bulk
50
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2946 pF @ 1000 V
captcha

0755-23814471

0