AS1M025120T

  • image of Single FETs, MOSFETs>AS1M025120T
  • image of Single FETs, MOSFETs>AS1M025120T
AS1M025120T
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Tube
15
: $38.4305
: 15

1

$38.4305

$38.4305

10

$34.1481

$341.4810

100

$29.8657

$2,986.5700

image of Single FETs, MOSFETs>AS1M025120T
image of Single FETs, MOSFETs>AS1M025120T
AS1M025120T
AS1M025120T
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Tube
15
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 1000 V
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