AS1M025120P

  • image of Single FETs, MOSFETs>AS1M025120P
  • image of Single FETs, MOSFETs>AS1M025120P
AS1M025120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Tube
124
: $38.4103
: 124

1

$38.4103

$38.4103

10

$34.1380

$341.3800

100

$29.8556

$2,985.5600

image of Single FETs, MOSFETs>AS1M025120P
image of Single FETs, MOSFETs>AS1M025120P
AS1M025120P
AS1M025120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Tube
124
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 1000 V
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