689-4D, 4N, 4P

  • image of Diode Arrays>689-4D, 4N, 4P
  • image of Diode Arrays>689-4D, 4N, 4P
689-4D, 4N, 4P
Diode Arrays
Microsemi Corporation
DIODE MODULE GP
Bulk
0
image of Diode Arrays>689-4D, 4N, 4P
689-4D, 4N, 4P
689-4D, 4N, 4P
Diode Arrays
Microsemi Corporation
DIODE MODULE GP
Bulk
0
Product parameter
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TYPEDESCRIPTION
MfrMicrosemi Corporation
Series-
PackageBulk
Product StatusACTIVE
Package / CaseND
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)500 ns
TechnologyStandard
Diode Configuration1 Pair Series Connection
Current - Average Rectified (Io) (per Diode)15A
Supplier Device PackageND
Operating Temperature - Junction-65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 10 A
Current - Reverse Leakage @ Vr10 µA @ 400 V
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